BUL903ed high voltage fast-switching npn power transistor n integrated antisaturation and protection network n integrated antiparallel collector emitter diode n high voltage capability n low spread of dynamic parameters n minimum lot-to-lot spread for reliable operation n very high switching speed n arcing test self protected applications n lamp electronic ballast for fluorescent lighting using 277v half bridge current-fed configuration description the BUL903ed is manufactured using high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. the device has been designed in order to operate without baker clamp and transil protection. this enables saving from 2 up to 10 components in the application. internal schematic diagram june 1998 absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v be = 0) 900 v v ceo collector-emitter voltage (ib = 0) 400 v v ebo emitter-base voltage (ic = 0) 7 v i c collector current 5 a i cm collector peak current (t p <5 ms) 8 a i b base current 2 a i bm base peak current (t p <5 ms) 4 a p tot total dissipation at tc = 25 o c70w t stg storage temperature -65 to 150 o c t j max. operating junction temperature 150 o c 1 2 3 to-220 ? 1/6
thermal data r thj-case r t hj- amb thermal resistance junction-case max thermal resistance junction-ambient max 1.8 62.5 o c/w o c/w electrical characteristics (t case =25 o c unless otherwise specified) symbol parameter test conditions min. typ. max. unit i ces collector cut-off current (v be =0) v ce =900v 1 ma i ebo base-emitter leakage current v eb =7v 100 m a v ceo(sus) collector-emitter sustaining voltage (i b =0) i c =10ma l=25mh 400 v v ce(sat) * collector-emitter saturation voltage i c =1a i b =0.15a 1.0 v v be(s at) * base-emitter saturation voltage i c =0.1a i b =0.05a i c =0.5a i b =0.1a i c =2.0a i b =0.4a 1.0 1.1 1.2 v v v h fe * dc current gain i c =5ma v ce =10v i c =0.5a v ce =3v 8 20 v f parallel diode forward voltage i f =3a 1.2 v t d t r t s t f resistive load delay time rise time storage time fall time v cc =125v i c =0.7a i b1 =0.05a i b2 =0.4a t p =300 m s 0.2 1.0 0.8 0.25 m s m s m s m s t d t r t s t f resistive load delay time rise time storage time fall time v cc =125v i c =0.5a i b1 = 0.045 a i b2 =0.5a t p =300 m s 0.2 0.5 0.8 0.5 m s m s m s m s t rr diode reverse recovery time i f =1a di/dt=100a/ m s v dd =30v 300 ns e sb avalanche energy l = 2 mh 6 mj * pulsed: pulse duration = 300 m s, duty cycle 1.5 % BUL903ed 2/6
safe operating areas dc current gain collector emitter saturation voltage derating curve dc current gain base emitter saturation voltage BUL903ed 3/6
reverse biased soa resistive load switching test circuit energy rating test circuit tut vbb l=2mh c vcc sc12620 vin tp t1 rg + BUL903ed 4/6
dim. mm inch min. typ. max. min. typ. max. a 4.40 4.60 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 d1 1.27 0.050 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.4 2.7 0.094 0.106 h2 10.0 10.40 0.393 0.409 l2 16.4 0.645 l4 13.0 14.0 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.2 6.6 0.244 0.260 l9 3.5 3.93 0.137 0.154 dia. 3.75 3.85 0.147 0.151 p011c to-220 mechanical data BUL903ed 5/6
information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specification mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of stmicroelectronics. the st logo is a trademark of stmicroelectronics ? 1998 stmicroelectronics printed in italy all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - france - germany - italy - japan - korea - malaysia - malta - mexico - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. . BUL903ed 6/6
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